| PART |
Description |
Maker |
| MCH3007 |
High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| MCH5908H-TL-E MCH5908G-TL-E |
High-Frequency Amplifi er, AM Amplifier, Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN03MA12 15GN03MA-TL-E ENA1108A |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| 2SK3557-7-TB-E 2SK3557-6-TB-E 2SK3557 |
N-Channel JFET, 15V, 10 to 32mA, 35mS, CP
High-Frequency Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MCH6001 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| EN7487B 50A02CH-TL-E 50A02CH-TL-H 50A02CH12 |
Low-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| TF408 |
N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifi er, Impedance Converter Applications
|
Sanyo Semicon Device
|
| MGA-43128-BLKG |
High Linearity (700-800) MHz Wireless Data Power Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
